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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE16002/D Designer'sTM Data Sheet SWITCHMODE Series NPN Silicon Power Transistors These transistors are designed for high-voltage, high-speed switching of inductive circuits where fall time and RBSOA are critical. They are particularly well-suited for line-operated switchmode applications. The MJE16004 is a high-gain version of the MJE16002 and MJH16002 for applications where drive current is limited. Typical Applications: Switching Regulators High Resolution Deflection Circuits Inverters Motor Drives Fast Switching Speeds 50 ns Inductive Fall Time @ 75_C (Typ) 70 ns Crossover Time @ 75_C (Typ) * 100_C Performance Specified for: Reverse-Biased SOA Inductive Switching Times Saturation Voltages Leakage Currents * * * * * MJE16002 * MJE16004 * *Motorola Preferred Device 5.0 AMPERE NPN SILICON POWER TRANSISTORS 450 VOLTS 80 WATTS IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII CASE 221A-06 TO-220AB MAXIMUM RATINGS Rating Symbol Value 450 850 6.0 5.0 10 4.0 8.0 Unit Vdc Vdc Vdc Adc Adc Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage VCEO(sus) VCEV VEB IC ICM IB IBM PD Collector Current -- Continuous -- Peak (1) Base Current -- Continuous -- Peak (1) Total Power Dissipation @ TC = 25_C @ TC = 100_C Derate above TC = 25_C 80 32 0.64 Watts W/_C Operating and Storage Junction Temperature Range TJ, Tstg - 65 to + 150 _C THERMAL CHARACTERISTICS Characteristic Symbol RJC TL Max Unit Thermal Resistance, Junction to Case 1.56 275 _C/W _C Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%. Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design. Preferred devices are Motorola recommended choices for future use and best overall value. Designer's and SWITCHMODE are trademarks of Motorola, Inc. REV 2 (c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I II I I I I IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I III I I I I IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I III I I I I IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I I I I III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIII III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I 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IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII MJE16002 MJE16004 (1) Pulse Test: PW = 300 s, Duty Cycle SWITCHING CHARACTERISTICS DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (1) SECOND BREAKDOWN OFF CHARACTERISTICS (1) ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) I *f = C IB1 Fall Time Storage Time Fall Time Storage Time Rise Time Delay Time Resistive Load (Table 1) Fall Time Storage Time Fall Time Storage Time Rise Time Delay Time Resistive Load (Table 1) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1.0 kHz) DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc) Base-Emitter Saturation Voltage (IC = 3.0 Adc, IB = 0.4 Adc) (IC = 3.0 Adc, IB = 0.3 Adc) (IC = 3.0 Adc, IS = 0.4 Adc, TC = 100_C) (IC = 3.0 Adc, IB = 0.3 Adc, TC = 100_C) Collector-Emitter Saturation Voltage (IC = 1.5 Adc, IB = 0.2 Adc) (IC = 1.5 Adc, IB = 0.15 Adc) (IC = 3.0 Adc, IB = 0.4 Adc) (IC = 3.0 Adc, IB = 0.3 Adc) (IC = 3.0 Adc, IB = 0.4 Adc, TC = 100_C) (IC = 3.0 Adc, IB = 0.3 Adc, TC = 100_C) Clamped Inductive SOA with Base Reverse Biased Second Breakdown Collector Current with Base Forward Biased Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) Collector Cutoff Current (VCE = 850 Vdc, RBE = 50 , TC = 100_C) Collector Cutoff Current (VCEV = 850 Vdc, VBE(off) = 1.5 Vdc) (VCEV = 850 Vdc, VBE(off) = 1.5 Vdc, TC = 100_C) Collector-Emitter Sustaining Voltage (Table 2) (IC = 100 mA, IB = 0) 2 (IC = 3.0 Adc, VCC = 250 Vdc, IB1 = 0.3 Adc, PW = 30 s, Duty Cycle 2.0%) (IC = 3.0 Adc, VCC = 250 Vdc, IB1 = 0.4 Adc, PW = 30 s, Duty Cycle 2.0%) v v Characteristic MJE16004/MJH16004 MJE16002/MJH10002 v 2%. (VBE(off) = 5.0 Vdc) (IB2 = 0.6 Adc, RB2 = 8.0 ) (VBE(off) = 5.0 Vdc) (IB2 = 0.8 Adc, RB2 = 8.0 ) MJE16002 MJE16004 MJE16002 MJE16004 MJE16002 MJE16004 MJE16002 MJE16004 MJE16002 MJE16004 MJE16002 MJE16004 VCEO(sus) VCE(sat) VBE(sat) Symbol RBSOA Motorola Bipolar Power Transistor Device Data IEBO ICER ICEV Cob hFE IS/b td td ts ts ts ts tr tr tf tf tf tf Min 450 5.0 7.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- See Figure 17 or 18 1000 Typ 250 800 130 130 400 100 80 30 60 30 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- See Figure 19 60 2700 3000 0.25 1.5 Max 350 300 100 300 300 100 200 1.5 1.5 1.5 1.5 1.0 1.0 2.5 2.5 2.5 2.5 1.0 2.5 -- -- -- -- -- -- -- mAdc mAdc mAdc Unit Vdc Vdc Vdc pF ns ns -- IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I II I I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I III I I I I IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I III I I I I IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIII IIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII (1) Pulse Test: PW = 300 s, Duty Cycle SWITCHING CHARACTERISTICS (continued) Motorola Bipolar Power Transistor Device Data I *f = C IB1 Crossover Time Fall Time Storage Time Crossover Time Fall Time Storage Time Inductive Load (Table 2) Crossover Time Fall Time Storage Time Crossover Time Fall Time Storage Time Inductive Load (Table 2) 0.05 0.1 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) hFE , DC CURRENT GAIN 60 50 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 7.0 5.0 5.0 VBE, BASE-EMITTER VOLTAGE (VOLTS) 0.1 0.2 0.5 2.0 3.0 3.0 0.1 1.0 30 20 10 Figure 3. Collector-Emitter Saturation Region 0.2 0.2 VCE = 5.0 V f = 10 TJ = 25C 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMPS) Figure 1. DC Current Gain IC, COLLECTOR CURRENT (AMPS) 0.5 (IC = 3.0 Adc, IB1 = 0.3 Adc, VBE(off) = 5.0 Vdc, VCE(pk) = 400 Vdc) (IC = 3.0 Adc, IB1 = 0.4 Adc, VBE(off) = 5.0 Vdc, VCE(pk) = 400 Vdc) f = 10 TJ = 100C Characteristics MJE16002 MJE16004 TJ = 100C 1.0 - 55C 25C v 2%. 2.0 f = 5 TJ = 25C 5.0 7.0 5.0 (TJ = 150_C) _C) (TJ = 100_C) _C) (TJ = 150_C) _C) (TJ = 100_C) _C) 10 10 0.2 0.5 0.7 0.7 1.5 0.3 0.1 0.5 1.0 0.3 2.0 1.0 2.0 3.0 0.1 0.03 0.05 0.07 0.1 Symbol TJ = 25C tsv tsv tsv tsv tc tfi tc tfi tc tfi tc tfi Figure 2. Collector Saturation Region 0.2 IC = 1 A f = 5 TJ = 25C Figure 4. Base-Emitter Voltage IC, COLLECTOR CURRENT (AMPS) 0.5 0.7 1.0 0.2 0.3 IB, BASE CURRENT (AMPS) Min -- -- -- -- -- -- -- -- -- -- -- -- 0.5 2A MJE16002 MJE16004 1.0 Typ 100 450 400 160 120 600 120 100 500 110 90 80 3A f = 10 TJ = 100C 4A 2.0 1300 1600 Max 200 150 250 200 -- -- -- -- -- -- 5A 5.0 2.0 Unit ns ns 3 3.0 10 MJE16002 MJE16004 TYPICAL STATIC CHARACTERISTICS (continued) 104 IC, COLLECTOR CURRENT ( A) 103 TJ = 150C 102 101 100 10-1 - 0.4 125C 100C 75C REVERSE 25C FORWARD VCE = 250 Vdc + 0.6 10 0.1 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) 850 C, CAPACITANCE (pF) Cib 1000 10000 TJ = 25C 100 Cob 0 - 0.2 + 0.2 + 0.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 5. Collector Cutoff Region Figure 6. Capacitance TYPICAL DYNAMIC CHARACTERISTICS 10000 5000 t sv, STORAGE TIME (ns) VBE(off) = 0 V 2000 VBE(off) = 2.0 V 1000 500 f = 5 TJ = 75C VCC = 20 V 0.7 1.0 3.0 2.0 IC, COLLECTOR CURRENT (AMPS) 5.0 VBE(off) = 5.0 V t sv, STORAGE TIME (ns) 10000 5000 2000 VBE(off) = 0 V 1000 VBE(off) = 2.0 V 500 f = 10 TJ = 75C VCC = 20 V 0.7 VBE(off) = 5.0 V 200 100 0.5 200 100 0.5 3.0 1.0 2.0 IC, COLLECTOR CURRENT (AMPS) 5.0 Figure 7. Storage Time Figure 8. Storage Time 1000 tfi, COLLECTOR CURRENT FALL TIME (ns) - 2.0 V 500 0V 200 100 50 f = 5 TJ = 75C VCC = 20 V 0.7 1.0 VBE(off) = 2.0 V VBE(off) = - 5.0 V - 5.0 V VBE(off) = 0 V tfi, COLLECTOR CURRENT FALL TIME (ns) 1000 - 2.0 V 500 200 100 50 f = 10 TJ = 75C VCC = 20 V 0.7 1.0 VBE(off) = 2.0 V VBE(off) = 5.0 V 2.0 3.0 5.0 VBE(off) = 0 V 0V - 5.0 V 20 10 0.5 20 10 0.5 2.0 3.0 5.0 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 9. Collector Current Fall Time 4 Figure 10. Collector Current Fall Time Motorola Bipolar Power Transistor Device Data MJE16002 MJE16004 TYPICAL DYNAMIC CHARACTERISTICS (continued) 1000 500 tc, CROSSOVER TIME (ns) - 2.0 V 500 tc, CROSSOVER TIME (ns) VBE(off) = 0 V 0V 100 50 f = 5 TJ = 75C VCC = 20 V 0.7 - 5.0 V 1000 - 2.0 V VBE(off) = 0 V 200 0V 100 50 f = 10 TJ = 75C VCC = 20 V 0.7 1.0 VBE(off) = 2.0 V VBE(off) = 5.0 V 2.0 3.0 5.0 - 5.0 V 200 20 10 0.5 VBE(off) = 2.0 V VBE(off) = 5.0 V 20 10 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMPS) 5.0 IC, COLLECTOR CURRENT (AMPS) Figure 11. Crossover Time Figure 12. Crossover Time TYPICAL ELECTRICAL CHARACTERISTICS 5.0 VCE(pk) 90% IC(pk) tfi tc 10% VCE(pk) 90% IB1 10% IC pk 2% IC tti IB2, REVERSE BASE CURRENT (AMPS) IC pk 90% VCE(pk) IC tsv trv 4.0 IB1 = 0.3 A 3.0 IB1 = 0.6 A VCE IB 2.0 IC = 3.0 A TJ = 25C 1.0 0 TIME 0 1.0 2.0 4.0 5.0 7.0 3.0 6.0 VBE(off), REVERSE BASE VOLTAGE (VOLTS) 8.0 Figure 13. Inductive Switching Measurements r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 14. Peak Reverse Base Current 1 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.01 0.01 D = 0.5 0.2 0.1 0.05 0.02 RJC(t) = r(t) RJC RJC = 156C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 0.2 0.5 1 2 5 t, TIME (ms) 10 20 50 P(pk) t1 t2 SINGLE PULSE 0.02 0.05 0.1 DUTY CYCLE, D = t1/t2 100 200 500 1k Figure 15. Thermal Response (MJE16002 and MJE16004) Motorola Bipolar Power Transistor Device Data 5 MJE16002 MJE16004 SAFE OPERATING AREA INFORMATION 10 IC, COLLECTOR CURRENT (AMPS) 5.0 2.0 1.0 0.5 0.2 0.1 0.05 0.02 0.01 5.0 7.0 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 10 20 30 50 70 100 200 300 450 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) TC = 25C dc 1.0 ms 10 IC(pk), COLLECTOR CURRENT (AMPS) 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0 100 200 500 700 850 1000 VCE(pk), PEAK COLLECTOR-EMITTER VOLTAGE (VOLTS) VBE(off) = 0 V VBE(off) = 1.0 to 5.0 V f 4 TJ 100C 10 s Figure 16. Maximum Rated Forward Bias Safe Operating Area (MJE16002 and MJE16004) Figure 17. Maximum Rated Reverse Bias Safe Operating Area 1.0 SECOND BREAKDOWN DERATING POWER DERATING FACTOR 0.8 0.6 THERMAL DERATING 0.4 0.2 0 20 40 60 80 100 120 140 160 TC, CASE TEMPERATURE (C) Figure 18. Power Derating 6 Motorola Bipolar Power Transistor Device Data MJE16002 MJE16004 SAFE OPERATING AREA INFORMATION FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 16 is based on TC = 25_C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figures 17 and 18 may be found at any case temperature by using the appropriate curve on Figure 20. T J(pk) may be calculated from the data in Figure 15. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base-to-emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe 0perating Area and represents the voltage-current condition allowable pulling reverse biased turn-off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 17 gives the RBSOA characteristics. Table 1. Resistive Load Switching td and tr 0V H.P. 214 or Equiv. P.G. *IC *IB T.U.T. RB = 33 50 RL VCC 50 500 VCC = 250 Vdc RL = 83 IC = 3.0 Adc IB = 0.3 Adc 100 -V +V 0V -5 V A 0V tr 15 ns 50 *IB T.U.T. *IC RL VCC H.P. 214 or Equiv. P.G. - 35 V + - 10 F 0.02 F 1.0 F 0.02 F RB1 A RB2 2N5337 ts and tf 20 100 + Vdc 11 Vdc 2N6191 Vin 11 V *Tektronix *P-6042 or *Equivalent VCC = 250 RL = 83 IC = 3.0 Adc IB1 = 0.3 Adc IB2 = 0.6 Adc For VBE(off) = 5.0 V RB1 = 33 RB2 = 8.0 RB2 = 0 Note: Adjust - V to obtain desired VBE(off) at Point A. Motorola Bipolar Power Transistor Device Data 7 MJE16002 MJE16004 Table 2. Inductive Load Switching 0.02 F H.P. 214 or Equiv. P.G. 0 - 35 V + - 100 + V 11 V 2N6191 20 10 F RB1 A 0.02 F 1.0 F +- 500 100 -V IC(pk) IC RB2 2N5337 50 T1 0V +V *IC T.U.T. MR856 *IB 50 Vclamp VCC IB VCE VCE(pk) -V A (ICpk [ LcoilCC ) V L IB1 T1 T1 adjusted to obtain IC(pk) VCEO(sus) L = 10 mH RB2 = VCC = 20 Volts *Tektronix *P-6042 or *Equivalent Inductive Switching L = 200 H RB2 = 0 VCC = 20 Volts RB1 selected for desired IB1 Scope -- Tektronix 7403 or Equivalent RBSOA L = 200 H RB2 = 0 VCC = 20 Volts RB1 selected for desired IB1 IB2 Note: Adjust - V to obtain desired VBE(off) at Point A. TYPICAL INDUCTIVE SWITCHING WAVEFORMS tsv IC(pk) = 3.0 Amps IB1 = 0.3 Amp VBE(off) = 5.0 Volts VCE(pk) = 300 Volts TC = 25C Time Base = 20 ns/cm IC(pk) = 3.0 Amps IB1 = 0.3 Amp VBE(off) = 5.0 Volts VCE(pk) = 300 Volts TC = 25C Time Base = 20 ns/cm tfi, tc 8 Motorola Bipolar Power Transistor Device Data MJE16002 MJE16004 PACKAGE DIMENSIONS -T- B 4 SEATING PLANE F T S C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 BASE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 Q 123 A U K H Z L V G D N R J STYLE 1: PIN 1. 2. 3. 4. CASE 221A-06 TO-220AB ISSUE Y Motorola Bipolar Power Transistor Device Data 9 MJE16002 MJE16004 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 10 Motorola Bipolar Power Transistor Device Data *MJE16002/D* MJE16002/D |
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